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Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch: Difference between revisions

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Using the electromagnetic coil on the recipe SiO2_res_10 gave higher etch rate on this chip that was placed in the center of a 6" wafer. The Etch profile is more angles.  
Using the electromagnetic coil on the recipe SiO2_res_10 gave higher etch rate on this chip, which is positioned in the center of a 6" wafer. The Etch profile is more angled.  
 


*Removing the H2 from the recipe to get less redeposition @ 200W platen power, EM:02/30A
*Removing the H2 from the recipe to get less redeposition @ 200W platen power, EM:02/30A
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File:C09975_05.jpg
File:C09975_05.jpg
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*I few more test with resist mask and electromagnets can be found here: [[/EM with resist mask|EM with resist mask]]
 
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