Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch: Difference between revisions
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Using the electromagnetic coil on the recipe SiO2_res_10 gave higher etch rate on this chip that was placed in the center of a 6" wafer. The Etch profile is more angles. | Using the electromagnetic coil on the recipe SiO2_res_10 gave higher etch rate on this chip that was placed in the center of a 6" wafer. The Etch profile is more angles. | ||
*Removing the H2 from the recipe to get less redeposition @ 200W platen power, EM:02/30A | |||
<gallery caption="Recipe name: SiO2_res, Recipe no. 10+EM+edit coils: C09975 coil_2500W, platen:200W, EM:02/30A, Pressure:8.8mTorr, C4F8:25.6sccm, He:448.7sccm, H2:0sccm, 3:56 min " perrow="5"> | |||
File:C09975_00.jpg | |||
File:C09975_02.jpg | |||
File:C09975_03.jpg | |||
File:C09975_04.jpg | |||
File:C09975_05.jpg | |||
</gallery> | |||
*I few more test with resist mask and electromagnets can be found here: [[/EM with resist mask|EM with resist mask]] | *I few more test with resist mask and electromagnets can be found here: [[/EM with resist mask|EM with resist mask]] | ||
<br clear="all"/> | <br clear="all"/> | ||