Specific Process Knowledge/Etch/DryEtchProcessing/Comparison: Difference between revisions
No edit summary |
No edit summary |
||
| Line 35: | Line 35: | ||
| style="background:WhiteSmoke; color:black"| Standard recipes for etching of Al, Cr and Ti, now also etches of W, TiW and Mo. Please do not use this machine with F-chemistry unless the Dry Etch group has allowed it! | | style="background:WhiteSmoke; color:black"| Standard recipes for etching of Al, Cr and Ti, now also etches of W, TiW and Mo. Please do not use this machine with F-chemistry unless the Dry Etch group has allowed it! | ||
| style="background:WhiteSmoke; color:black"| Etching of silicon oxide, resist, BCB, silicon nitride, InP, InGaAs and GaAs on III-V substrates | | style="background:WhiteSmoke; color:black"| Etching of silicon oxide, resist, BCB, silicon nitride, InP, InGaAs and GaAs on III-V substrates | ||
| style="background:WhiteSmoke; color:black"| Etching of III-V materials such as GaN, InP/InGaAsP/InGaAs, AlGaAs, GaAs | | style="background:WhiteSmoke; color:black"| Etching of III-V materials such as GaN, InP/InGaAsP/InGaAs, AlGaAs, GaAs. | ||
Etching of SiO2 and SiN on III-V materials | |||
| style="background:WhiteSmoke; color:black"| Physical Etching of all materials | | style="background:WhiteSmoke; color:black"| Physical Etching of all materials | ||
|- valign="top" | |- valign="top" | ||