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Specific Process Knowledge/Lithography/UVExposure/aligner MLA4: Difference between revisions

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Created page with "== Aligner: Maskless 04 == 400px|thumb|Aligner: Maskless 04 is located in PolyFabLab in building 347. The logon password for the PC is "mla" (without quotation marks). The µMLA Tabletop Maskless Aligner from Heidelberg, located in PolyFabLab in building 347, is a direct exposure lithography tool installed in 2024. It is a UV exposure system, that exposes the patterns directly on photosensitive resists on chips, 2, 4, and 6 inch substrate..."
 
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== Aligner: Maskless 04 ==
=Aligner: Maskless 04=
[[Image:Heidelberg_uMLA.JPG|400px|thumb|Aligner: Maskless 04 is located in PolyFabLab in building 347.]]
[[Image:Heidelberg_uMLA.JPG|400px|thumb|Aligner: Maskless 04 is located in PolyFabLab in building 347.]]


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Equipment info in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=544 LabManager] - '''requires login'''
Equipment info in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=544 LabManager] - '''requires login'''
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===Exposure dose and defocus===
==Exposure dose and defocus==
[[Specific Process Knowledge/Lithography/Resist#Aligner:_Maskless_04|Information on UV exposure dose]]
[[Specific Process Knowledge/Lithography/Resist#Aligner:_Maskless_04|Information on UV exposure dose]]
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*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_04_processing#Alignment|Alignment]]
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_04_processing#Alignment|Alignment]]


=== Equipment performance and process related parameters ===
==Equipment performance and process related parameters==


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Latest revision as of 12:54, 13 January 2026

Aligner: Maskless 04

Aligner: Maskless 04 is located in PolyFabLab in building 347.

The logon password for the PC is "mla" (without quotation marks).

The µMLA Tabletop Maskless Aligner from Heidelberg, located in PolyFabLab in building 347, is a direct exposure lithography tool installed in 2024. It is a UV exposure system, that exposes the patterns directly on photosensitive resists on chips, 2, 4, and 6 inch substrates, without prior fabrication of a mask. The system offers top side alignment with good accuracy.

Link to information about alignment mark design.

The user manual and contact information can be found in LabManager:

Equipment info in LabManager - requires login

Process information

Equipment performance and process related parameters

Purpose

Alignment and UV exposure

Performance Exposure mode
  • Projection (Raster mode)
  • Direct laser writing (Vector mode)
Exposure light
  • 365nm (LED) for projection
  • 405nm (diode laser) for direct laser writing
Focusing method

Pneumatic or Optical

Minimum structure size

Down to 1µm

Design formats
  • GDS-II
  • CIF
  • DXF
  • Gerber
  • HIMT format
Alignment modes

Top side only, ±1µm

Substrates Substrate size
  • maximum writing area: 150x150 mm2
  • 150 mm wafer
  • 100 mm wafer
  • 50 mm wafer
  • pieces down to 3x3 mm2 with optical autofocus
Allowed materials

All PolyFabLab materials with sufficient stiffness and flatness.
Total height variation across the substrate must be less than ±80 µm - including wafer bow

Batch

1