Specific Process Knowledge/Etch/Etching of Silicon Oxide: Difference between revisions
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*[[/SiO2 etch using RIE1 or RIE2|Dry etch using RIE1 or RIE2]] | *[[/SiO2 etch using RIE1 or RIE2|Dry etch using RIE1 or RIE2]] | ||
*[[/SiO2 etch using AOE|Dry etch using AOE]] | *[[/SiO2 etch using AOE|Dry etch using AOE]] | ||
*[[Specific Process Knowledge/Etch/IBE/IBSD Ionfab 300|IBE/IBSD Ionfab 300]] | |||
==Comparison of wet Silicon Oxide etch and dry etches (RIE and AOE) etch for etching of Silicon Oxide== | ==Comparison of wet Silicon Oxide etch and dry etches (RIE and AOE) etch for etching of Silicon Oxide== |
Revision as of 14:36, 18 July 2011
Silicon oxide can be etched using either wet chemistry or dry etch equipment. Wet chemistry is mainly used to remove all the oxide on the surface (backside and front side) of a wafer or for isotrotropic etching. Dry etching etches anisotropic. It etches one side of the wafer at a time and can be used to etch structures with several masking materials.
Etch of silicon oxide can be done by either wet etch or dry etch. The standard setups for this here at DANCHIP are:
Wet etches:
Dry etches:
Comparison of wet Silicon Oxide etch and dry etches (RIE and AOE) etch for etching of Silicon Oxide
Wet Silicon Oxide etch (BHF, SIO Etch (wetting agent), 5%HF) | RIE | AOE | |
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General description |
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Possible masking materials |
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Etch rate |
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Batch size |
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Size of substrate |
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Allowed materials |
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