Specific Process Knowledge/Etch/Wet III-V Etches: Difference between revisions

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 *[[Specific Process Knowledge/Etch/III-V ICP|III-V ICP]]
 *[[Specific Process Knowledge/Etch/III-V RIE|III-V RIE - Plassys]] (will be decommissioned October 2025)
+== InP substrate etching ==
+When etching InP substrates, both 2” wafers and small pieces, you should collect the used chemicals in a waste bottle. This does not apply for etching epilayers.
+There should be a bottle in the fumehood for HCl used to etch InP substrates.
+Once the bottle is full, it should be brought to the basement of building 346 and a new one placed in the CR. For InP waste a clean and empty developer bottle can be used.
 == InP or GaAs substrate etching ==
-When etching InP or GaAs substrates, both 2” wafers and small pieces, you should collect the used chemicals in a waste bottle. This does not apply for etching epilayers.
+When etching GaAs substrates, both 2” wafers and small pieces, you should collect the used chemicals in a waste bottle. This does not apply for etching epilayers.
-There should be two bottles in the fumehood one for HCl used to etch InP substrates and one for citric acid: H2O2 or H2SO4 (10%):H2O2 used to etch GaAs substrates.
+There should be a bottle in the fumehood for citric acid: H2O2 or H2SO4 (10%):H2O2 used to etch GaAs substrates.
-Once the bottles are full, you should bring them in the basement of building 346 and have a new one in CR. '''For the GaAs waste you should use empty H2O2 bottles (since they should have a special lid that avoid overpressure)''', while for InP waste we can use an empty and clean developer bottle.
+Once the bottle is full, it should be brought to the basement of building 346 and a new one placed in the CR. '''For the GaAs waste you should use empty H2O2 bottles (since they should have a special lid that avoid over pressure).'''
 ==HCl:H3PO4 etch==