Specific Process Knowledge/Etch/III-V ICP/SiO2: Difference between revisions
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!Results | !Results | ||
!SiO2 Etch Slow | !SiO2 Etch Slow | ||
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|Etch rate of PECVD BPSG | |Etch rate of PECVD BPSG | ||
|'''39.4nm/min (22-01-2016)''' | |'''39.4nm/min (22-01-2016)''' ''Test by Artem Shikin @ Fotonik'' | ||
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|Etch rate in thermal oxide | |Etch rate in thermal oxide | ||
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|Wafer uniformity (100mm) | |Wafer uniformity (100mm) | ||
|+-0.4%-0.8% ((max-min)/2*Average) (bghe 2019-2021 5 tests) | | | ||
+-0.4%-0.8% ((max-min)/2*Average) (bghe 2019-2021 5 tests) | |||
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|Profile [<sup>o</sup>] | |Profile [<sup>o</sup>] | ||