Specific Process Knowledge/Thermal Process/C1 Furnace Anneal-oxide: Difference between revisions
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|style="background:LightGrey; color:black"|Gas flows | |style="background:LightGrey; color:black"|Gas flows | ||
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*N<math>_2</math>: | *Annealing: N<math>_2</math>:5 sccm | ||
*Dry oxidation: O<math>_2</math>:5 sccm | |||
*Wet oxidation: N<math>_2</math>:5 sccm | |||
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!style="background:silver; color:black" align="left" valign="top" rowspan="2"|Substrates | !style="background:silver; color:black" align="left" valign="top" rowspan="2"|Substrates | ||
|style="background:LightGrey; color:black"|Batch size | |style="background:LightGrey; color:black"|Batch size | ||
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*1-30 4" wafer (or 2" wafers) per run | *1-30 4" and 6" wafer (or 2" wafers) per run | ||
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| style="background:LightGrey; color:black"|Substrate material allowed | | style="background:LightGrey; color:black"|Substrate material allowed | ||