Specific Process Knowledge/Thermal Process/C1 Furnace Anneal-oxide

C1 Furnace Anneal Oxide

C1 Furnace Anneal Oxide: positioned in cleanroom 2

C1 Furnace Anneal Oxide is a Tempress horizontal furnace for oxidation and annealing of silicon wafers. The furnace is the only one there can handel 6" wafer.

This furnace is the first furnace tube in the furnace C-stack positioned in cleanroom 2. In this furnace it is allowed to enter wafers that comes directly from PECVD1 (assuming they were very clean when entering PECVD1). Check the cross contamination chart. If you are in doubt, please ask one from the process engineer team.

Process knowledge

• Oxidation: look at the Oxidation page
• Annealing: look at the Annealing page

Overview of the performance of Anneal Oxide furnace and some process related parameters

Purpose	Oxidation and annealing	Oxidation: Dry Wet: with bubbler (water steam + N$_{2}$)
Performance	Film thickness	Dry SiO2: 50Å to ~2000Å (takes too long to make it thicker) Wet SiO2: 50Å to ~5µm ((takes too long to make it thicker)
Process parameter range	Process Temperature	800-1150 oC
	Process pressure	1 atm
	Gas flows	Annealing: N$_{2}$:5 sccm Dry oxidation: O$_{2}$:5 sccm Wet oxidation: N$_{2}$:5 sccm
Substrates	Batch size	1-30 4" and 6" wafer (or 2" wafers) per run
	Substrate material allowed	Silicon wafers (new from the box or RCA cleaned) with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned) Quartz wafers (RCA cleaned) From PECVD1 directly (assuming they fulfilled the above before entering the PECVD1)