Specific Process Knowledge/Etch/DRIE-Pegasus/ProcessA/PrA-1: Difference between revisions
No edit summary |
No edit summary |
||
| Line 3: | Line 3: | ||
<!--Checked for updates on 5/10-2020 - ok/jmli --> | <!--Checked for updates on 5/10-2020 - ok/jmli --> | ||
<!--Checked for updates on 28/6-2023 - ok/jmli --> | <!--Checked for updates on 28/6-2023 - ok/jmli --> | ||
<!--Checked for updates on 4/9-2025 - ok/jmli --> | |||
{{contentbydryetch}} | {{contentbydryetch}} | ||
Latest revision as of 10:59, 4 September 2025
Feedback to this page: click here
Unless otherwise stated, the content of this page was created by the dry etch group at DTU Nanolab
| Date | Substrate Information | Process Information | SEM Images | |||
|---|---|---|---|---|---|---|
| Wafer info | Exposed area | Conditioning | Recipe | Wafer ID | ||
| 2/5-2016 | 4" Travka20 Wafer | 20 % Si | 3 minute TDESC clean | PrA-1, 80 cycles or 14:40 minutes | C03991.02 |
|
| 2/5-2016 | 4" Travka20 Wafer | 20 % Si | 3 minute TDESC clean | PrA-1, 80 cycles or 14:40 minutes | C03991.05 |
|
| 3/6-2016 | 4" Travka20 Wafer | 20 % Si | 3 minute TDESC clean | PrA-1, 80 cycles or 14:40 minutes | C04047.02 |
|
| 3/6-2016 | 4" Travka20 Wafer | 20 % Si | 3 minute TDESC clean | PrA-1, 80 cycles or 14:40 minutes | C04047.05 |
|
