Specific Process Knowledge/Etch/DRIE-Pegasus/SOIetch: Difference between revisions

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! Cycle time (secs)  
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! Pressure (mtorr)  
! Pressure (mtorr)  

Revision as of 14:15, 5 July 2011

SOI etch specifications
Parameter Specification Average result
Etch rate (µm/min) > 10 10.7
Etched depth (µm) 100 107
Scallop size (nm) < 800 685
Profile (degs) 91 +/- 1 90.7
Selectivity to AZ photoresist > 100 183
Undercut (µm) <1.5 0.89
Uniformity (%) < 3.5 2.7
Repeatability (%) <4 0.47



SOI etch recipe
Main etch (D->E) Etch Dep
Gas flow (sccm) SF6 400 O2 40 C4F8 250
Cycle time (secs) 3.0 2.0
Pressure (mtorr) 30 25
Coil power (W) 2800 2000
LF Platen power (W) 75 0
LF Platen Pulsing software set-up 0.025s, 75% -
Cycles 96 (process time 08:00)
Common Temperature 20 degs, HBC 10 torr, Long funnel, with baffle & 100 mm spacers