Specific Process Knowledge/Etch/DRIE-Pegasus/processD: Difference between revisions
No edit summary |
mNo edit summary |
||
| Line 1: | Line 1: | ||
Mask information | |||
* 1 µm of spin coated AZ5214E photoresist, no hardbake | |||
* Patterned by UV lithography with the ‘Travka 50’ mask | |||
* 50 % etch load | |||
{| border="2" cellpadding="2" cellspacing="1" style="text-align:center;" | {| border="2" cellpadding="2" cellspacing="1" style="text-align:center;" | ||
|+ '''Process D specifications''' | |+ '''Process D specifications''' | ||