Specific Process Knowledge/Etch/DRIE-Pegasus/processD: Difference between revisions

Revision as of 13:19, 5 July 2011

**Process D specifications**
Parameter	Specification	Average result
Etch rate (µm/min)	Not specified	2.88
Etched depth (µm)	20-30	28.75
Scallop size (nm)	< 30	46
Profile (degs)	85 +/- 5	89.7
Selectivity to AZ photoresist	Not specified	50
Undercut (nm)	Not specified	65
Uniformity (%)	< 3.5	4.56-0.25
Repeatability (%)	<4

**Process D recipe**
Main etch (D->E)	Etch	Dep
Gas flow (sccm)	SF₆ 275 O₂ 5	C₄F₈ 150
Cycle time (secs)	2.4	2.0
Pressure (mtorr)	26	20
Coil power (W)	2500	2000
Platen power (W)	35	0
Cycles	110 (process time 08:04)
Common	Temperature 0 degs, HBC 10 torr, Long funnel, with baffle & 100 mm spacers

@@ Line 1: / Line 1: @@
 {| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"
-|+ '''Process A specifications'''
+|+ '''Process D specifications'''
 |-
 ! Parameter
@@ Line 8: / Line 8: @@
 ! Etch rate (µm/min)
 | Not specified
-| 18.9
+| 2.88
 |-
 ! Etched depth (µm)
-| 150
+| 20-30
-| 189.1
+| 28.75
 |-
 ! Scallop size (nm)
-| < 800
+| < 30
-| 718
+| 46
 |-
 ! Profile (degs)
-| 91 +/- 1
+| 85 +/- 5
-| 91.1
+| 89.7
 |-
 ! Selectivity to AZ photoresist
-| > 150
+| Not specified
-| 310
+| 50
 |-
-! Undercut (µm)
+! Undercut (nm)
-| <1.5
+| Not specified
-| 0.84
+| 65
 |-
 ! Uniformity (%)
 | < 3.5
-| 3.0
+| 4.56-0.25
 |-
 ! Repeatability (%)
 | <4
-| 0.43
+|
 |-
 |}