Specific Process Knowledge/Etch/DRIE-Pegasus/processD: Difference between revisions

Revision as of 11:56, 5 July 2011

**Process A specifications**
Parameter	Specification	Average result
Etch rate (µm/min)	> 15	18.9
Etched depth (µm)	150	189.1
Scallop size (nm)	< 800	718
Profile (degs)	91 +/- 1	91.1
Selectivity to AZ photoresist	> 150	310
Undercut (µm)	<1.5	0.84
Uniformity (%)	< 3.5	3.0
Repeatability (%)	<4	0.43

**Process D recipe**
Main etch (D->E)	Etch	Dep
Gas flow (sccm)	SF₆ 275 O₂ 5	C₄F₈ 150
Cycle time (secs)	2.4	2.0
Pressure (mtorr)	26	20
Coil power (W)	2500	2000
Platen power (W)	35	0
Cycles	110 (process time 08:04)
Common	Temperature 0 degs, HBC 10 torr, Long funnel, with baffle & 100 mm spacers

@@ Line 39: / Line 39: @@
 |-
 |}
@@ Line 44: / Line 45: @@
 {| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"
-|+ '''Process A recipe'''
+|+ '''Process D recipe'''
 |-
-!
-! colspan="2" | Step 1
-! colspan="2" | Step 2
 |-
-! width="120" | Parameter
+! width="120" | Main etch (D->E)
-! width="120" | Etch
-! width="120" | Dep
 ! width="120" | Etch
 ! width="120" | Dep
 |-
 ! Gas flow (sccm)
-| SF<sub>6</sub> 350 (1.5 s) 550
+| SF<sub>6</sub> 275 O<sub>2</sub>  5
-| C<sub>4</sub>F<sub>8</sub> 200
+| C<sub>4</sub>F<sub>8</sub> 150
-| SF<sub>6</sub> 350 (1.5 s) 550
-| C<sub>4</sub>F<sub>8</sub> 200
 |-
 ! Cycle time (secs)
-| 7.0
+| 2.4
-| 4.0
+| 2.0
-| 7.0
-| 4.0
 |-
 ! Pressure (mtorr)
-| 25 (1.5 s) 90 >> 150
+| 26
-| 25
+| 20
-| 25 (1.5 s) 150
-| 25
 |-
 ! Coil power (W)
-| 2800
+| 2500
-| 2000
-| 2800
 | 2000
 |-
 ! Platen power (W)
-| 120 >> 140 (1.5) 45
+| 35
 | 0
-| 140 (1.5) 45
-| 0
 |-
 ! Cycles
-| colspan="2" | 11 (keep fixed)
+| colspan="2" | 110 (process time 08:04)
-| colspan="2" | 44 (vary this)
 |-
 ! Common
-| colspan="4" | Temperature 20 degs, HBC 10 torr, Short funnel, with baffle & 5mm spacers
+| colspan="2" | Temperature 0 degs, HBC 10 torr, Long funnel, with baffle & 100 mm spacers
 |}