Specific Process Knowledge/Etch/DRIE-Pegasus/processC: Difference between revisions

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The 100 mm wafers had an Al mask made by lift-off:
# 80 nm of spin coated ZEP520A E-beam resist
# Patterned by E-beam lithograph
# 20 nm Al deposited and patterned by lift-off
# ~ 99 % etch load
{| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"
{| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"
|+ '''Process A specifications'''
|+ '''Process A specifications'''
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|-
|-
! Etch rate (µm/min)   
! Etch rate (µm/min)   
| > 15
| Not specified
| 18.9
|  
|-
|-
! Etched depth (µm)
! Etched depth (µm)
| 150
| 300
| 189.1
|  
|-
|-
! Scallop size (nm)
! Scallop size (nm)
| < 800
| < 30
| 718
|  
|-
|-
! Profile (degs)
! Profile (degs)
| 91 +/- 1
| 85 +/- 5
| 91.1
|  
|-
|-
! Selectivity to AZ photoresist
! Selectivity to resist
| > 150
| Not speicified
| 310
|  
|-
|-
! Undercut (µm)
! Undercut (nm)
| <1.5
| < 30
| 0.84
|  
|-
|-
! Uniformity (%)
! Uniformity (%)
| < 3.5
| < 3.5
| 3.0
|  
|-
|-
! Repeatability (%)
! Repeatability (%)
| <4
| <4
| 0.43
|  
|-
|-
|}
|}

Revision as of 10:51, 5 July 2011

The 100 mm wafers had an Al mask made by lift-off:

  1. 80 nm of spin coated ZEP520A E-beam resist
  2. Patterned by E-beam lithograph
  3. 20 nm Al deposited and patterned by lift-off
  4. ~ 99 % etch load


Process A specifications
Parameter Specification Average result
Etch rate (µm/min) Not specified
Etched depth (µm) 300
Scallop size (nm) < 30
Profile (degs) 85 +/- 5
Selectivity to resist Not speicified
Undercut (nm) < 30
Uniformity (%) < 3.5
Repeatability (%) <4



Process A recipe
Step 1 Step 2
Parameter Etch Dep Etch Dep
Gas flow (sccm) SF6 350 (1.5 s) 550 C4F8 200 SF6 350 (1.5 s) 550 C4F8 200
Cycle time (secs) 7.0 4.0 7.0 4.0
Pressure (mtorr) 25 (1.5 s) 90 >> 150 25 25 (1.5 s) 150 25
Coil power (W) 2800 2000 2800 2000
Platen power (W) 120 >> 140 (1.5) 45 0 140 (1.5) 45 0
Cycles 11 (keep fixed) 44 (vary this)
Common Temperature 20 degs, HBC 10 torr, Short funnel, with baffle & 5mm spacers
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