Jump to content

Specific Process Knowledge/Lithography/EBeamLithography/2D detection system: Difference between revisions

Thope (talk | contribs)
Thope (talk | contribs)
Line 46: Line 46:
|-  
|-  
| colspan="2" style="text-align:enter;|
| colspan="2" style="text-align:enter;|
.
Settings of the "Scan type" and "2D" panes.
|}
|}


Finally, in the "Gain" pane we can setup the gain parameters. Notice that it is possible to switch between "BE" and "SE", i.e. backscattered electrons and secondary electrons. Depending on the layer stack and materials there can be a big difference in the contrast and this is the only way on the system to use secondary electrons for alignment.
Finally, in the "Gain" pane we can setup the gain parameters. Notice that it is possible to switch between "BE" and "SE", i.e. backscattered electrons and secondary electrons. Depending on the layer stack and materials there can be a big difference in the contrast and this is the only way on the system to use secondary electrons for alignment.


It can be difficult to get these gain settings right. The best option is to move the stage to the mark location, turn on SEM mode and fine working settings and then copy these to the scan conditions.


{| style="border: none; border-spacing: 0; margin: 1em auto; text-align: center;"
|-
| [[image:gainwindow.png|400px]] 
|-
| colspan="1" style="text-align:enter;|
Gain settings used for image scan.
|}