Specific Process Knowledge/Etch/DRIE-Pegasus/processB: Difference between revisions

Revision as of 10:23, 5 July 2011

**Process B specifications**
Parameter	Specification	Average result
Etch rate (µm/min)	> 10	10.7
Etched depth (µm)	100	107
Scallop size (nm)	< 800	685
Profile (degs)	91 +/- 1	90.7
Selectivity to AZ photoresist	> 100	183
Undercut (µm)	<1.5	0.89
Uniformity (%)	< 3.5	2.7
Repeatability (%)	<4	0.47

**Process B recipe**
Main etch (D->E)	Etch	Dep
Gas flow (sccm)	SF₆ 350 O₂ 35	C₄F₈ 200
Cycle time (secs)	7.0	4.0
Pressure (mtorr)	20 (1.5 s) 100	25
Coil power (W)	2800	2000
Platen power (W)	130 (1.5) 40	0
Cycles	55 (process time 10:05)
Common	Temperature 10 degs, HBC 10 torr, Short funnel, with baffle & 5mm spacers

@@ Line 32: / Line 32: @@
 ! Uniformity (%)
 | < 3.5
-| 3.0
+| 2.7
 |-
 ! Repeatability (%)
@@ Line 46: / Line 46: @@
 |+ '''Process B recipe'''
 |-
-!
-! colspan="2" | Step 1
-! colspan="2" | Step 2
 |-
-! width="120" | Parameter
+! width="120" | Main etch (D->E)
-! width="120" | Etch
-! width="120" | Dep
 ! width="120" | Etch
 ! width="120" | Dep
 |-
 ! Gas flow (sccm)
-| SF<sub>6</sub> 350 (1.5 s) 550
+| SF<sub>6</sub> 350 O<sub>2</sub>  35
-| C<sub>4</sub>F<sub>8</sub> 200
-| SF<sub>6</sub> 350 (1.5 s) 550
 | C<sub>4</sub>F<sub>8</sub> 200
 |-
 ! Cycle time (secs)
-| 7.0
-| 4.0
 | 7.0
 | 4.0
 |-
 ! Pressure (mtorr)
-| 25 (1.5 s) 90 >> 150
+| 20 (1.5 s) 100
-| 25
-| 25 (1.5 s) 150
 | 25
 |-
 ! Coil power (W)
 | 2800
-| 2000
-| 2800
 | 2000
 |-
 ! Platen power (W)
-| 120 >> 140 (1.5) 45
+| 130 (1.5) 40
 | 0
-| 140 (1.5) 45
-| 0
 |-
 ! Cycles
-| colspan="2" | 11 (keep fixed)
+| colspan="2" | 55 (process time 10:05)
-| colspan="2" | 44 (vary this)
 |-
 ! Common
-| colspan="4" | Temperature 20 degs, HBC 10 torr, Short funnel, with baffle & 5mm spacers
+| colspan="2" | Temperature 10 degs, HBC 10 torr, Short funnel, with baffle & 5mm spacers
 |}