Specific Process Knowledge/Etch/DRIE-Pegasus/processB: Difference between revisions
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|+ '''Process | |+ '''Process B specifications''' | ||
|- | |- | ||
! Parameter | ! Parameter | ||
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|- | |- | ||
! Etch rate (µm/min) | ! Etch rate (µm/min) | ||
| > | | > 10 | ||
| | | 10.7 | ||
|- | |- | ||
! Etched depth (µm) | ! Etched depth (µm) | ||
| | | 100 | ||
| | | 107 | ||
|- | |- | ||
! Scallop size (nm) | ! Scallop size (nm) | ||
| < 800 | | < 800 | ||
| | | 685 | ||
|- | |- | ||
! Profile (degs) | ! Profile (degs) | ||
| 91 +/- 1 | | 91 +/- 1 | ||
| | | 90.7 | ||
|- | |- | ||
! Selectivity to AZ photoresist | ! Selectivity to AZ photoresist | ||
| > | | > 100 | ||
| | | 183 | ||
|- | |- | ||
! Undercut (µm) | ! Undercut (µm) | ||
| <1.5 | | <1.5 | ||
| 0. | | 0.89 | ||
|- | |- | ||
! Uniformity (%) | ! Uniformity (%) | ||
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! Repeatability (%) | ! Repeatability (%) | ||
| <4 | | <4 | ||
| 0. | | 0.47 | ||
|- | |- | ||
|} | |} | ||
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{| border="2" cellpadding="2" cellspacing="1" style="text-align:center;" | {| border="2" cellpadding="2" cellspacing="1" style="text-align:center;" | ||
|+ '''Process | |+ '''Process B recipe''' | ||
|- | |- | ||
! | ! |
Revision as of 10:18, 5 July 2011
Parameter | Specification | Average result |
---|---|---|
Etch rate (µm/min) | > 10 | 10.7 |
Etched depth (µm) | 100 | 107 |
Scallop size (nm) | < 800 | 685 |
Profile (degs) | 91 +/- 1 | 90.7 |
Selectivity to AZ photoresist | > 100 | 183 |
Undercut (µm) | <1.5 | 0.89 |
Uniformity (%) | < 3.5 | 3.0 |
Repeatability (%) | <4 | 0.47 |
Step 1 | Step 2 | |||
---|---|---|---|---|
Parameter | Etch | Dep | Etch | Dep |
Gas flow (sccm) | SF6 350 (1.5 s) 550 | C4F8 200 | SF6 350 (1.5 s) 550 | C4F8 200 |
Cycle time (secs) | 7.0 | 4.0 | 7.0 | 4.0 |
Pressure (mtorr) | 25 (1.5 s) 90 >> 150 | 25 | 25 (1.5 s) 150 | 25 |
Coil power (W) | 2800 | 2000 | 2800 | 2000 |
Platen power (W) | 120 >> 140 (1.5) 45 | 0 | 140 (1.5) 45 | 0 |
Cycles | 11 (keep fixed) | 44 (vary this) | ||
Common | Temperature 20 degs, HBC 10 torr, Short funnel, with baffle & 5mm spacers |