Specific Process Knowledge/Etch/DRIE-Pegasus: Difference between revisions

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 === Process A ===
-Process A is labelled ''Large trench (80μm wide) 150μm depth''. In the acceptance test the process was run on a 150 mm wafer with 12-13 % etch load.
+Process A is labelled ''Large trench (80μm wide) 150μm depth''. In the acceptance test the process was run on a 150 mm SPTS wafer with 12-13 % etch load.
 [[Specific Process Knowledge/Etch/DRIE-Pegasus/processA|Process A: Recipe, specifications and results]]
+=== Process B ===
+Process A is labelled ''Via (30μm diameter) 100μm depth''. In the acceptance test the process was run on a 150 mm SPTS wafer with 12-13 % etch load.
+[[Specific Process Knowledge/Etch/DRIE-Pegasus/processB|Process B: Recipe, specifications and results]]
+=== Process C ===
+Process A is labelled ''Via (30μm diameter) 100μm depth''. In the acceptance test the process was run on a 100 mm SPTS wafer with 12-13 % etch load.
+[[Specific Process Knowledge/Etch/DRIE-Pegasus/processC|Process C: Recipe, specifications and results]]
+=== Process D ===
+Process D is labelled ''Micro stamp silicon etch''. In the acceptance test the process was run on a 150 mm wafer with 12-13 % etch load.
+[[Specific Process Knowledge/Etch/DRIE-Pegasus/processD|Process D: Recipe, specifications and results]]
 == Nanoetching ==