Specific Process Knowledge/Thermal Process/E1 Furnace Oxidation (8"): Difference between revisions
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!style="background:silver; color:black;" align="center"|Purpose | !style="background:silver; color:black;" align="center"|Purpose | ||
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*Oxidation of 150 mm and 200 mm wafers | *Oxidation of (100 mm), 150 mm and 200 mm wafers | ||
*Annealing of 150 mm and 200 mm wafers | *Annealing of (100 mm), 150 mm and 200 mm wafers | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
Annealing: | Annealing: | ||
*Using N<sub>2</sub> | *Using N<sub>2</sub> | ||
Oxidation: | Oxidation: | ||
*Dry oxidation using O<sub>2</sub> | *Dry oxidation using O<sub>2</sub>. Reaction: Si + O<sub>2</sub> -> SiO<sub>2</sub> | ||
*Wet oxidation using | *Wet oxidation using steam/H<sub>2</sub>O. Reaction: Si + 2H<sub>2</sub>O -> SiO<sub>2</sub> + 2H<sub>2</sub>(g). The steam is generated by a Bronkhorst steamer injection system. | ||
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!style="background:silver; color:black" align="center"|Performance | !style="background:silver; color:black" align="center"|Performance | ||
|style="background:LightGrey; color:black"|Film thickness | |style="background:LightGrey; color:black"|Film thickness | ||
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*Dry | *Dry oxide: ~ 0 nm to 300 nm (it takes too long to grow thicker dry oxide layers) | ||
*Wet | *Wet oxide: ~ 0 nm to 3 µm (~23 hours wet oxidation at 1100 <sup>o</sup>C) | ||
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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | ||
|style="background:LightGrey; color:black"|Process Temperature | |style="background:LightGrey; color:black"|Process Temperature | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*800 - 1100 <sup>o</sup>C | *800 <sup>o</sup>C - 1100 <sup>o</sup>C | ||
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|style="background:LightGrey; color:black"|Process pressure | |style="background:LightGrey; color:black"|Process pressure | ||
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|style="background:LightGrey; color:black"|Batch size | |style="background:LightGrey; color:black"|Batch size | ||
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*(1 - 50 100 mm wafers) | |||
*1 - 50 150 mm wafers | *1 - 50 150 mm wafers | ||
*1 - | *1 - 25 200 mm wafers | ||
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| style="background:LightGrey; color:black"|Substrate materials allowed | | style="background:LightGrey; color:black"|Substrate materials allowed | ||