Specific Process Knowledge/Thin film deposition/Deposition of Tungsten Nitride: Difference between revisions

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	* [[Specific Process Knowledge/Thin film deposition/Deposition of Tungsten Nitride/WN Reactive Sputtering in Cluster Lesker PC3\|Deposition of Tungsten Nitride (WN) using reactive sputtering]] in Sputter-System Metal-Nitride(PC3) Source 2 (3-inch target)		* [[Specific Process Knowledge/Thin film deposition/Deposition of Tungsten Nitride/WN Reactive Sputtering in Cluster Lesker PC3\|Deposition of Tungsten Nitride (WN) using reactive sputtering]] in Sputter-System Metal-Nitride(PC3) Source 2 (3-inch target)



	At the moment (July 2025) we have a 3-inch W target (0.125" thick, bonded to Cu) for PC3 or PC1.		At the moment (July 2025) we have a 3-inch W target (0.125" thick, bonded to Cu) for PC3 or PC1.