Specific Process Knowledge/Thin film deposition/Deposition of Tungsten Nitride: Difference between revisions
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== Deposition of Tungsten Nitride == | == Deposition of Tungsten Nitride == | ||
Deposition of WN can only be done by reactive sputtering using W target. | Deposition of WN<sub>x</sub> can only be done by reactive sputtering using W target. | ||
The tool of choice for this application is the Cluster-based multi-chamber high vacuum sputtering deposition system, commonly referred to as the 'Cluster Lesker.' The operating process is described in detail.: | The tool of choice for this application is the Cluster-based multi-chamber high vacuum sputtering deposition system, commonly referred to as the 'Cluster Lesker.' The operating process is described in detail.: | ||
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* [[Specific Process Knowledge/Thin film deposition/Deposition of Tungsten Nitride/WN Reactive Sputtering in Cluster Lesker PC3|Deposition of Tungsten Nitride (WN) using reactive sputtering]] in Sputter-System Metal-Nitride(PC3) Source 2 (3-inch target) | * [[Specific Process Knowledge/Thin film deposition/Deposition of Tungsten Nitride/WN Reactive Sputtering in Cluster Lesker PC3|Deposition of Tungsten Nitride (WN) using reactive sputtering]] in Sputter-System Metal-Nitride(PC3) Source 2 (3-inch target) | ||
At the moment (July 2025) we have a 3-inch W target (0.125" thick, bonded to Cu) for PC3 | At the moment (July 2025) we have a 3-inch W target (0.125" thick, bonded to Cu) for PC3 or PC1. | ||