Specific Process Knowledge/Thin film deposition/Deposition of Tungsten Nitride: Difference between revisions

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 == Deposition of Scandium Nitride ==
-Deposition of ScN can only be done by reactive sputtering using Sc target.
+Deposition of WN can only be done by reactive sputtering using W target.
-The only tool for this application is the Cluster-based multi-chamber high vacuum sputtering deposition system, commonly referred to as the 'Cluster Lesker.' The operating process is thoroughly documented and described in detail.:
+The tool of choice for this application is the Cluster-based multi-chamber high vacuum sputtering deposition system, commonly referred to as the 'Cluster Lesker.' The operating process is described in detail.:
-* [[Specific Process Knowledge/Thin film deposition/Deposition of Scandium Nitride/ScN Reactive Sputtering in Cluster Lesker PC3|Deposition of Scandium Nitride (ScN) using reactive sputtering]] in Sputter-System Metal-Nitride(PC3) Source 1 (4-inch target)
+* [[Specific Process Knowledge/Thin film deposition/Deposition of Tungsten Nitride/WN Reactive Sputtering in Cluster Lesker PC3|Deposition of Tungsten Nitride (WN) using reactive sputtering]] in Sputter-System Metal-Nitride(PC3) Source 2 (3-inch target)
-At the moment (October 2023) we have a 4-inch Sc target (0.250" thick, bonded to Cu) for PC3 Src1.
+At the moment (July 2025) we have a 3-inch W target (0.125" thick, bonded to Cu) for PC3 orPC1