Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/Silicon Nitride Etch: Difference between revisions
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====Etch rate & uniformity==== | ====Etch rate & uniformity==== | ||
'''Recipe: ''Slowetch 2''''' | |||
'''SRN (LPCVD) etch uniformity on 6″ wafer | '''SRN (LPCVD) etch uniformity on 6″ wafer''' | ||
[[File:slowetch2_100% loadSRN.png|400px|left|thumb|Process: No mask, 100 % load, etching was done after 10 mins chamber clean + 5 mins TDESC clean (for all wafers)]] | [[File:slowetch2_100% loadSRN.png|400px|left|thumb|Process: No mask, 100 % load, etching was done after 10 mins chamber clean + 5 mins TDESC clean (for all wafers)]] | ||
[[File:slowetch2_100% loadSRN_etchrate.png|400px|left|thumb|Note: etch rate for SRN with Slowetch 2. The 4 wafers were processed on 4 different days, the variation suggests process instability or chamber memory effects influencing etch behavior across runs.]] | [[File:slowetch2_100% loadSRN_etchrate.png|400px|left|thumb|Note: etch rate for SRN with Slowetch 2. The 4 wafers were processed on 4 different days, the variation suggests process instability or chamber memory effects influencing etch behavior across runs.]] | ||
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'''SRN (LPCVD) etch uniformity on 6″ wafer | |||
'''Recipe: ''Slowetch''''' | |||
'''SRN (LPCVD) etch uniformity on 6″ wafer ''' | |||
[[File:SRN_slowetch_data_100%load.png|400px|left|thumb|Process: No mask, 100 % load, etching was done after 10 mins chamber clean + 5 mins TDESC clean (for all wafers)<br/> | [[File:SRN_slowetch_data_100%load.png|400px|left|thumb|Process: No mask, 100 % load, etching was done after 10 mins chamber clean + 5 mins TDESC clean (for all wafers)<br/> | ||