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Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/Silicon Nitride Etch: Difference between revisions

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{| border="2" cellspacing="2" cellpadding="3"
!Parameter
|Recipe name: '''Slow Etch'''
|Recipe name: '''Slow Etch2'''
 
|-
|Coil Power [W]
|350
|200
|-
|Platen Power [W]
|25
|50
|-
|Platen temperature [<sup>o</sup>C]
|20
|20
|-
|H2 flow [sccm]
|15
|15
|-
|CF<sub>4</sub> flow [sccm]
|30
|30
|-
|Pressure [mTorr]
|3
|10
|-
|}




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'''SRN (LPCVD) etch uniformity on 6″ wafer with ''Slowetch'' recipe'''
'''SRN (LPCVD) etch uniformity on 6″ wafer with ''Slowetch'' recipe'''


[[File:SRN_slowetch_data_100%load.png|400px|left|thumb|Process: No mask, 100 % load, etching was done after 10 mins chamber clean + 5 mins TDESC clean (for all wafers)
[[File:SRN_slowetch_data_100%load.png|400px|left|thumb|Process: No mask, 100 % load, etching was done after 10 mins chamber clean + 5 mins TDESC clean (for all wafers)<br/>
Note: The ''slowetch'' recipe has faster etch recipe significantly improves etch rate (~30 nm/min) but leads to reduced uniformity (~2.5%) compared to the slower recipes (<1% uniformity). This highlights a trade-off between throughput and etch uniformity in SRN processing.]]
Note: The ''slowetch'' recipe has faster etch recipe significantly improves etch rate (~30 nm/min) but leads to reduced uniformity (~2.5%) compared to the slower recipes (<1% uniformity). This highlights a trade-off between throughput and etch uniformity in SRN processing.]]


Revision as of 13:27, 28 July 2025

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Parameter Recipe name: Slow Etch Recipe name: Slow Etch2
Coil Power [W] 350 200
Platen Power [W] 25 50
Platen temperature [oC] 20 20
H2 flow [sccm] 15 15
CF4 flow [sccm] 30 30
Pressure [mTorr] 3 10


Etch rate uniformity & etch rate

SRN (LPCVD) etch uniformity on 6″ wafer with Slowetch 2 recipe

Process: No mask, 100 % load, etching was done after 10 mins chamber clean + 5 mins TDESC clean (for all wafers)
Note: etch rate for SRN with Slowetch 2. The wafers were processed on 4 different days, the variation suggests process instability or chamber memory effects influencing etch behavior across runs.
Note: Compared to the first dataset (with chamber cleaning), the second set shows higher variability in etch performance despite identical recipes. Wafer 5, without conditioning, had the highest etch rate (11.5 nm/min) but poor uniformity, while Wafer 6 showed lower etch rate with improved uniformity. This confirms chamber conditioning significantly stabilizes SRN etch rates and enhances wafer-to-wafer uniformity.
















SRN (LPCVD) etch uniformity on 6″ wafer with Slowetch recipe

Process: No mask, 100 % load, etching was done after 10 mins chamber clean + 5 mins TDESC clean (for all wafers)
Note: The slowetch recipe has faster etch recipe significantly improves etch rate (~30 nm/min) but leads to reduced uniformity (~2.5%) compared to the slower recipes (<1% uniformity). This highlights a trade-off between throughput and etch uniformity in SRN processing.








*The process was repeated twice, but only one set of data is presented here.

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