Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/Silicon Nitride Etch: Difference between revisions
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'''SRN (LPCVD) etch uniformity on 6″ wafer with ''Slowetch'' recipe''' | '''SRN (LPCVD) etch uniformity on 6″ wafer with ''Slowetch'' recipe''' | ||
[[File:SRN_slowetch_data_100%load.png|400px|left|thumb|Note: The ''slowetch'' recipe has faster etch recipe significantly improves etch rate (~30 nm/min) but leads to reduced uniformity (~2.5%) compared to the slower recipes (<1% uniformity). This highlights a trade-off between throughput and etch uniformity in SRN processing.]] | [[File:SRN_slowetch_data_100%load.png|400px|left|thumb|Process: No mask, 100 % load, etching was done after 10 mins chamber clean + 5 mins TDESC clean (for all wafers) | ||
Note: The ''slowetch'' recipe has faster etch recipe significantly improves etch rate (~30 nm/min) but leads to reduced uniformity (~2.5%) compared to the slower recipes (<1% uniformity). This highlights a trade-off between throughput and etch uniformity in SRN processing.]] | |||