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Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/Silicon Nitride Etch: Difference between revisions

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Prakus (talk | contribs)
NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab347-labadviser-users-35231
156 edits
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'''SRN (LPCVD) etch uniformity on 6″ wafer with ''Slowetch'' recipe'''
[[File:SRN_slowetch_data_100%load.png|400px|left|thumb|Note: The ''slowetch'' recipe has faster etch recipe significantly improves etch rate (~30 nm/min) but leads to reduced uniformity (~2.5%) compared to the slower recipes (<1% uniformity). This highlights a trade-off between throughput and etch uniformity in SRN processing.]]




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'''SRN (LPCVD) etch uniformity on 6″ wafer with ''Slowetch'' recipe'''


[[File:SRN_slowetch_data_100%load.png|400px|left|thumb|Note: The ''slowetch'' recipe has faster etch recipe significantly improves etch rate (~30 nm/min) but leads to reduced uniformity (~2.5%) compared to the slower recipes (<1% uniformity). This highlights a trade-off between throughput and etch uniformity in SRN processing.]]




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The process was repeated twice, but only one set of data is presented here.<br>
<nowiki>*</nowiki>The process was repeated twice, but only one set of data is presented here.<br>
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