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Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/Silicon Nitride Etch: Difference between revisions

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[[File:slowetch2_100% loadSRN_etchrate.png|400px|left|thumb|Note: etch rate for SRN with Slowetch 2. The wafers were processed on 4 different days,  the variation suggests process instability or chamber memory effects influencing etch behavior across runs.]]
[[File:slowetch2_100% loadSRN_etchrate.png|400px|left|thumb|Note: etch rate for SRN with Slowetch 2. The wafers were processed on 4 different days,  the variation suggests process instability or chamber memory effects influencing etch behavior across runs.]]
[[File:SRN_etch_rate_uniformity_nochambercondition.png|400px|left|thumb|Note: Compared to the first dataset (with chamber cleaning), the second set shows higher variability in etch performance despite identical recipes. Wafer 5, without conditioning, had the highest etch rate (11.5 nm/min) but poor uniformity, while Wafer 6 showed lower etch rate with improved uniformity. This confirms chamber conditioning significantly stabilizes SRN etch rates and enhances wafer-to-wafer uniformity.]]
[[File:SRN_etch_rate_uniformity_nochambercondition.png|400px|left|thumb|Note: Compared to the first dataset (with chamber cleaning), the second set shows higher variability in etch performance despite identical recipes. Wafer 5, without conditioning, had the highest etch rate (11.5 nm/min) but poor uniformity, while Wafer 6 showed lower etch rate with improved uniformity. This confirms chamber conditioning significantly stabilizes SRN etch rates and enhances wafer-to-wafer uniformity.]]
'''SRN (LPCVD) etch uniformity on 6″ wafer with ''Slowetch'' recipe'''
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The process was repeated twice, but only one set of data is presented here.
The process was repeated twice, but only one set of data is presented here.
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Revision as of 12:38, 28 July 2025

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Etch rate uniformity & etch rate

SRN (LPCVD) etch uniformity on 6″ wafer with Slowetch 2 recipe


Process: No mask, 100 % load, etching was done after 10 mins chamber clean + 5 mins TDESC clean (for all wafers)
Note: etch rate for SRN with Slowetch 2. The wafers were processed on 4 different days, the variation suggests process instability or chamber memory effects influencing etch behavior across runs.
Note: Compared to the first dataset (with chamber cleaning), the second set shows higher variability in etch performance despite identical recipes. Wafer 5, without conditioning, had the highest etch rate (11.5 nm/min) but poor uniformity, while Wafer 6 showed lower etch rate with improved uniformity. This confirms chamber conditioning significantly stabilizes SRN etch rates and enhances wafer-to-wafer uniformity.

SRN (LPCVD) etch uniformity on 6″ wafer with Slowetch recipe


The process was repeated twice, but only one set of data is presented here.

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