Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/Silicon Nitride Etch: Difference between revisions
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====Etch rate uniformity & etch rate==== | |||
'''SRN (LPCVD) etch uniformity on 6″ wafer with ''Slowetch 2'' recipe''' | |||
[[File:slowetch2_100% loadSRN.png|400px|left|thumb|Process: No mask, 100 % load, etching was done after 10 mins chamber clean + 5 mins TDESC clean (for all wafers)]] | |||
[[File:slowetch2_100% loadSRN_etchrate.png|400px|left|thumb|Note: etch rate for SRN with Slowetch 2. The wafers were processed on 4 different days, the variation suggests process instability or chamber memory effects influencing etch behavior across runs.]] | |||
[[File:SRN_etch_rate_uniformity_nochambercondition.png|400px|left|thumb|Note: Compared to the first dataset (with chamber cleaning), the second set shows higher variability in etch performance despite identical recipes. Wafer 5, without conditioning, had the highest etch rate (11.5 nm/min) but poor uniformity, while Wafer 6 showed lower etch rate with improved uniformity. This confirms chamber conditioning significantly stabilizes SRN etch rates and enhances wafer-to-wafer uniformity.]] | |||
The process was repeated twice, but only one set of data is presented here. | |||