Specific Process Knowledge/Thin film deposition/Deposition of MoSi: Difference between revisions
| Line 10: | Line 10: | ||
Molybdenum silicide is particularly attractive for optical coatings because co-sputtering Mo with Si allows precise control of MoSi stoichiometry—and, in turn, the film’s refractive index at the design wavelength. | Molybdenum silicide is particularly attractive for optical coatings because co-sputtering Mo with Si allows precise control of MoSi stoichiometry—and, in turn, the film’s refractive index at the design wavelength. | ||
MoSi alloy can be deposited by DC co-sputtering in either Sputter-System Metal-Oxide (PC1) or Sputter-System Metal-Nitride (PC3)—collectively referred to as the Cluster Lesker. The process uses two 3-inch targets: | MoSi alloy can be deposited by DC co-sputtering in either [[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-System Metal-Oxide(PC1)]] or [[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-System Metal-Nitride (PC3)]]—collectively referred to as the Cluster Lesker. The process uses two 3-inch targets: | ||
*Mo (unbonded) | *Mo (unbonded) | ||