Specific Process Knowledge/Thin film deposition/Deposition of Tantalum: Difference between revisions

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Tantalum deposition

Tantalum can be deposited by e-beam evaporation and sputter deposition. In the chart below you can compare the different deposition equipment.

Sputtering of Tantalum

Sputtering of Ta in Sputter-System (Lesker).

E-beam evaporation of Tantalum

Tantalum can be deposited by e-beam assisted evaporation in the Temescal tool.

E-beam evaporation of Ta in Temescal

	E-beam evaporation (Temescal and E-beam evaporator (10-pockets))	Sputter (Lesker)	Sputter deposition (Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3))
General description	E-beam deposition of Ta (line-of-sight deposition)	Sputter deposition of Ta (not line-of-sight)	Sputter deposition of Ta (not line-of-sight)
Pre-clean	Ar ion source (E-beam evaporator Temescal only)	none	RF Ar clean
Layer thickness	10Å to 0.2 µm*	10Å to ?	10Å to ?
Deposition rate	0.5Å/s to 10Å/s	~0.3Å/s	at least in the range 1 Å/s to 4 Å/s
Batch size	Up to 4x6" wafers Up to 3x8" wafers (ask for holder) Many smaller pieces	Pieces or 1x4" wafer or 1x6" wafer	Pieces or 10x4" wafer or 10x6" wafer
Allowed materials	Silicon Silicon oxide Silicon (oxy)nitride Photoresist PMMA Mylar Metals See also the cross-contamination sheet	Silicon Silicon oxide Silicon nitride Silicon (oxy)nitride Photoresist PMMA Mylar SU-8 Metals Carbon	Silicon Silicon oxide Silicon nitride Silicon (oxy)nitride Photoresist PMMA Mylar SU-8 Metals Carbon
Comment	Tantalum deposition heats the chamber* Heating to 250 °C available in the 10-pocket e-beam evaporator.	2-inch Ta target.	3-inch Ta target. Heating available to 600 °C.

* The max thickness is limited to 200 nm as Ta deposition heats the chamber. If you wish to deposit more than that, it has to be done in several steps. The temperature on the back of a Si wafer rose to above 160 °C during deposition of 40 nm Ta even when using a cooling plate. If you wish to e-beam deposit Ta, please contact the Thin film group.

@@ Line 23: / Line 23: @@
 !
-! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]])
+! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]])
 ! Sputter ([[Specific_Process_Knowledge/Thin_film_deposition/Lesker|Lesker]])
 ! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
@@ Line 39: / Line 39: @@
 |-style="background:LightGrey; color:black"
 ! Pre-clean
-|Ar ion source
+|Ar ion source (E-beam evaporator Temescal only)
-|RF Ar clean
+|none
 |RF Ar clean
 |-
@@ Line 111: / Line 111: @@
 ! Comment
 | Tantalum deposition heats the chamber*
-| 2-inch Ta target
-| 3-inch Ta target
+Heating to 250 °C available in the 10-pocket e-beam evaporator.
+| 2-inch Ta target.
+| 3-inch Ta target.
+Heating available to 600 °C.
 |}
 '''*'''  ''The max thickness is limited to 200 nm as Ta deposition heats the chamber. If you wish to deposit more than that, it has to be done in several steps. The temperature on the back of a Si wafer rose to above 160 °C during deposition of 40 nm Ta even when using a cooling plate. If you wish to e-beam deposit Ta, please contact the [mailto:thinfilm@nanolab.dtu.dk Thin film group].''