Specific Process Knowledge/Thin film deposition/Deposition of Tantalum: Difference between revisions
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! | ! | ||
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]]) | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]]) | ||
! Sputter ([[Specific_Process_Knowledge/Thin_film_deposition/Lesker|Lesker]]) | ! Sputter ([[Specific_Process_Knowledge/Thin_film_deposition/Lesker|Lesker]]) | ||
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]]) | ! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]]) | ||
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|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
! Pre-clean | ! Pre-clean | ||
|Ar ion source | |Ar ion source (E-beam evaporator Temescal only) | ||
| | |none | ||
|RF Ar clean | |RF Ar clean | ||
|- | |- | ||
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! Comment | ! Comment | ||
| Tantalum deposition heats the chamber* | | Tantalum deposition heats the chamber* | ||
| 2-inch Ta target | |||
| 3-inch Ta target | Heating to 250 °C available in the 10-pocket e-beam evaporator. | ||
| 2-inch Ta target. | |||
| 3-inch Ta target. | |||
Heating available to 600 °C. | |||
|} | |} | ||
'''*''' ''The max thickness is limited to 200 nm as Ta deposition heats the chamber. If you wish to deposit more than that, it has to be done in several steps. The temperature on the back of a Si wafer rose to above 160 °C during deposition of 40 nm Ta even when using a cooling plate. If you wish to e-beam deposit Ta, please contact the [mailto:thinfilm@nanolab.dtu.dk Thin film group].'' | '''*''' ''The max thickness is limited to 200 nm as Ta deposition heats the chamber. If you wish to deposit more than that, it has to be done in several steps. The temperature on the back of a Si wafer rose to above 160 °C during deposition of 40 nm Ta even when using a cooling plate. If you wish to e-beam deposit Ta, please contact the [mailto:thinfilm@nanolab.dtu.dk Thin film group].'' | ||