Specific Process Knowledge/Thermal Process/Oxidation/Dry oxidation C1 furnace: Difference between revisions
Appearance
No edit summary |
mNo edit summary |
||
| Line 1: | Line 1: | ||
{{cc-nanolab}} | |||
<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span> | |||
<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span> | |||
=Dry Oxidation in the C1 furnace= | |||
The C1 furnace can be used for dry oxidation of 4" and 6" wafers. | The C1 furnace can be used for dry oxidation of 4" and 6" wafers. | ||
| Line 11: | Line 11: | ||
==Dry Oxidation uniformity for 4" wafers== | |||
A dry oxidation has been done with 30 4" wafers in the quartz boat in the furnace to get an idea of how uniform the oxide layer is from wafer to wafer over the boat. | A dry oxidation has been done with 30 4" wafers in the quartz boat in the furnace to get an idea of how uniform the oxide layer is from wafer to wafer over the boat. | ||