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Specific Process Knowledge/Thin film deposition/Deposition of Nickel: Difference between revisions

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Some process information is available here for e-beam evaporated films:
Some process information is available here for e-beam evaporated films:
<!--*[[/Electroplating of nickel|Electroplating of nickel]]-->
<!--*[[/Electroplating of nickel|Electroplating of nickel]]-->
*[[/Stress Wordentec Ni films|Stress in Wordentec Ni films: study here]].
*[[/Stress Wordentec Ni films|Stress in e-beam evaporated Ni films: study here]] ''(from the now decommissioned Wordentec deposition tool - basic trends in results should be transferable to other e-beam evaporators).''


In the chart below you can compare the different deposition equipment:
In the chart below you can compare the different deposition equipment:
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!  
!  
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
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! General description
! General description
|E-beam deposition of Nickel
|E-beam deposition of Nickel
|E-beam deposition of Nickel
|Sputter deposition of Nickel
|Sputter deposition of Nickel
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|Ar ion etch (only in E-beam evaporator Temescal)
|Ar ion etch (only in E-beam evaporator Temescal)
|
|
|RF Ar clean
|RF Ar clean
|RF Ar clean
|-
|-
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! Layer thickness
! Layer thickness
|10 Å to 1 µm *
|10 Å to 1 µm *
|10 Å to 1 µm *
|10 Å to 500 nm **
|10 Å to 5000 Å **
|10 Å to 500 nm **
|10 Å to 5000 Å **
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"


! Deposition rate
! Deposition rate
|1-10 Å/s
|1-10 Å/s
|1-10 Å/s
|Depends on process parameters, about 1 Å/s  
|Depends on process parameters, about 1 Å/s  
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*Up to 3x8" wafers (ask for holder)
*Up to 3x8" wafers (ask for holder)
*Many smaller pieces
*Many smaller pieces
|
*24x2" wafers or
*6x4" wafers or
*6x6" wafers
|
|
* Pieces or
* Pieces or
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|
|
*Almost any that does not degas at your intended substrate temperature. See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet]
*Almost any that does not degas at your intended substrate temperature. See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet]
|
Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=167 cross-contamination sheet].
|
|
* Almost any that do not degas.
* Almost any that do not degas.
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! Comment
! Comment
|
|
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*[[/Stress Wordentec Ni films|Stress in Wordentec Ni films: study here]].
|
|
*May use high-strength magnet for deposition.  
*May use high-strength magnet for deposition.  

Revision as of 15:29, 20 June 2025

The content on this page, including all images and pictures, was created by DTU Nanolab staff, unless otherwise stated.

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All links to Labmanager Including APV and QC requires login.


Nickel deposition

Nickel can be deposited by e-beam evaporation or sputtering at DTU Nanolab. For electroplating you will have to contact other institutes at DTU, e.g., DTU Mechanical Engineering.

Some process information is available here for e-beam evaporated films:

In the chart below you can compare the different deposition equipment:

E-beam evaporation (E-beam evaporator (Temescal) and E-beam evaporator (10-pockets)) Sputter deposition (Lesker) Sputter deposition (Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3))
General description E-beam deposition of Nickel Sputter deposition of Nickel Sputter deposition of Nickel
Pre-clean Ar ion etch (only in E-beam evaporator Temescal) RF Ar clean
Layer thickness 10 Å to 1 µm * 10 Å to 500 nm ** 10 Å to 500 nm **
Deposition rate 1-10 Å/s Depends on process parameters, about 1 Å/s Depends on process parameters, at least ~ 4 Å/s, see conditions here
Batch size
  • Up to 4x6" wafers
  • Up to 3x8" wafers (ask for holder)
  • Many smaller pieces
  • Pieces or
  • 1x4" wafer or
  • 1x6" wafer
  • Up to 10x4" or 6" wafers
  • Many smaller pieces
Allowed materials
  • Almost any that do not degas.
  • Almost any that does not degas at your intended substrate temperature. See cross contamination sheets for PC1 and PC3
Comment
  • May use high-strength magnet for deposition.
  • May use high-strength magnet for deposition

* To deposit a cumulative thickness above 600 nm permission is required from metal@nanolab.dtu.dk to ensure enough material is present in the machine


** To deposit a cumulative thickness above 200 nm permission is required from metal@nanolab.dtu.dk to ensure enough material is present in the machine

Quality control of e-beam evaporated Ni films

Quality control (QC) for Wordentec

Nickel deposition is tested occasionally, around 1-2 times per year. LabManager links require login.

QC Recipe: Process 5
Deposition rate 10 Å/s
Thickness 100 nm
Pressure Below 4*10-6 mbar
QC limits Wordentec
Measured average thickness (Å) ± 10 %
Lowest accepted deposition rate (Å/s) 6 Å/s

Thickness is measured in 5 points with a stylus profiler.


Quality control (QC) for the Temescal

Nickel deposition is tested occasionally, around 1 time per year. LabManager links require login.

QC Recipe: Standard recipes/Ni
Deposition rate 10 Å/s
Thickness 100 nm
Pressure Below 1*10-6 mbar
QC limits Temescal
Deposition rate deviation ± 20 %
Measured average thickness ± 10 %
Thickness deviation across a 4" wafer ± 5 %

Thickness is measured in 5 points with a stylus profiler.