Specific Process Knowledge/Thin film deposition/Deposition of Molybdenum

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Molybdenum deposition

Molybdenum can be deposited by e-beam evaporation or sputtering. In the chart below you can compare the different deposition equipment.

	E-beam evaporation (Temescal)	Sputter deposition (Lesker)	Sputter deposition (Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3))
General description	E-beam deposition of Mo (line-of-sight deposition)	Sputter deposition of Mo (not line-of-sight)	Sputter deposition of Mo (not line-of-sight)
Pre-clean	Ar ion source	RF Ar clean	RF Ar clean
Layer thickness	10Å to 0.2 µm*	10Å to 500 Å	10Å to ? discuss with staff
Deposition rate	1Å/s to 10Å/s	Depends on process parameters, roughly about 1 Å/s	Not known yet, probably similar to 'old' Lesker sputter system
Batch size	Up to 4x6" wafers Up to 3x8" wafers (ask for holder) Many smaller pieces	Pieces or 1x4" wafer or 1x6" wafer	Up to 10x4" or 6" wafers Many smaller pieces
Allowed materials	Silicon Silicon oxide Silicon (oxy)nitride Photoresist PMMA Mylar Metals See also the cross-contamination sheet	Silicon Silicon oxide Silicon nitride Silicon (oxy)nitride Photoresist PMMA Mylar SU-8	Almost any as long as it does not outgas.
Comment		Sputter target size 2".	Sputter target size 3-4" (usually 3"). So far (June 2025) Mo has been deposited in PC1. See process log for details.

* Depending on the amount of heating during Mo deposition, which we will discover during process development.