Specific Process Knowledge/Thin film deposition/Deposition of Gold: Difference between revisions
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! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]]) | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]]) | ||
! Resistive thermal evaporation ([[Specific Process Knowledge/Thin film deposition/thermalevaporator|Thermal Evaporator]]) | ! Resistive thermal evaporation ([[Specific Process Knowledge/Thin film deposition/thermalevaporator|Thermal Evaporator]]) | ||
! Sputter ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]]) | ! Sputter ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]]) | ||
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|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
! General description | ! General description | ||
| E-beam deposition of Au | | E-beam deposition of Au | ||
| Resistive thermal deposition of Au | | Resistive thermal deposition of Au | ||
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|RF Ar clean | |RF Ar clean | ||
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|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
! Layer thickness | ! Layer thickness | ||
|10 Å to 1 µm * | |10 Å to 1 µm * | ||
|10 Å to 200 nm | |10 Å to 200 nm | ||
|10 Å to | |10 Å to 500 nm ** | ||
|10 Å to | |10 Å to 500 nm ** | ||
| very thin, few nm range | | very thin, few nm range | ||
| very thin, few nm range | | very thin, few nm range | ||
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|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
! Deposition rate | ! Deposition rate | ||
|0.5- | |0.5-5 Å/s | ||
|1 Å/s (can be adjusted to around 5 Å/s) | |||
|1 Å/s (can be adjusted to around | |||
|Depends on process parameters, 1-10 Å/s | |Depends on process parameters, 1-10 Å/s | ||
|Depends on process parameters | |Depends on process parameters | ||
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*Up to 3x8" wafers (ask for special holder) | *Up to 3x8" wafers (ask for special holder) | ||
*many smaller pieces | *many smaller pieces | ||
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*4x2" wafers or | *4x2" wafers or | ||
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*See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet] | *See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet] | ||
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* Almost any as long as it does not outgas - see cross-contamination sheets in Labmanager | * Almost any as long as it does not outgas - see cross-contamination sheets in Labmanager | ||
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* For thicknesses above 600 nm permission is required | * For thicknesses above 600 nm permission is required | ||
* | * Pumpdown approx 20 min. | ||
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*Make sure that all pellets are melted beforehand | *Make sure that all pellets are melted beforehand | ||
*Pumpdown approx. 20 min | |||
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*Takes approx. 10 minutes to load and transfer sample | *Takes approx. 10 minutes to load and transfer sample | ||