Specific Process Knowledge/Thin film deposition/thermalevaporator: Difference between revisions
| Line 12: | Line 12: | ||
This instrument is NANO 36 Thermal evaporator from Kurt J. Lesker. Instrument specifications below. It takes around 1 hour for a round of deposition (depending on thickness and rate of course). The small chamber means that the deposited thickness may vary quite a bit across large samples, as further described in the specifications table. | This instrument is NANO 36 Thermal evaporator from Kurt J. Lesker. Instrument specifications below. It takes around 1 hour for a round of deposition (depending on thickness and rate of course). The small chamber means that the deposited thickness may vary quite a bit across large samples, as further described in the specifications table. | ||
The main purpose of this evaporator is to deposit Al for | The main purpose of this evaporator is to deposit Al for dissipation of charge when doing electron beam lithography on insulating substrates. It can also be used for Cr evaporation for the same purpose. The advantage of Al is that it can be removed simultaneously with the e-beam resist. However Cr may allow even better resolution of the lithography. | ||
Additionally we have processes for evaporation of Ag, Au, Cu, and Ge. We have also attempted to evaporate Zn, but this resulted in heavy contamination of the chamber. You are always welcome to ask for other metals in the machine. | Additionally we have processes for evaporation of Ag, Au, Cu, and Ge. We have also attempted to evaporate Zn, but this resulted in heavy contamination of the chamber. You are always welcome to ask for other metals in the machine. | ||