Specific Process Knowledge/Thin film deposition/thermalevaporator: Difference between revisions
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*Approx. 10 % variation on a 6" wafer with 100 nm Cr (rod source) | *Approx. 10 % variation on a 6" wafer with 100 nm Cr (rod source) | ||
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|style="background:LightGrey; color:black"|Thickness uniformity (with rotation) | |style="background:LightGrey; color:black"|Thickness uniformity ('''with rotation''') | ||
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*Approx. 6-9 % Wafer-in-Wafer variation on 4" wafers with Al (crucible source) using 3-wafer holder (4 % variation wafer-to-wafer) | *Approx. 6-9 % Wafer-in-Wafer variation on 4" wafers with Al (crucible source) using 3-wafer holder (4 % variation wafer-to-wafer) | ||
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''*'' ''The variation is defined as (Max-Min)/Average for the various points measured on the wafer. The max. point was around the center and the min. somewhere along the edge. The exact location of the maximum thickness depends how the sample is placed relative to the point of maximum material flux. Number for Al based on QC measurements 2018-2023.'' | ''*'' ''The variation is defined as (Max-Min)/Average for the various points measured on the wafer. The max. point was around the center and the min. somewhere along the edge. The exact location of the maximum thickness depends how the sample is placed relative to the point of maximum material flux. | ||
Number for Al 4" no rotation based on QC measurements 2018-2023. | |||
Other measurements by Rebecca Ettlinger, Evgeniy Shkondin and Patama Pholprasit 2018-2023'' | |||