Specific Process Knowledge/Thin film deposition/thermalevaporator: Difference between revisions
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*We need to develop a new process for each rate | *We need to develop a new process for each rate | ||
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|style="background:LightGrey; color:black"|Thickness uniformity | |style="background:LightGrey; color:black"|Thickness uniformity ('''no rotation''', wafer centered above source)* | ||
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* | *Approx. 6-9 % variation on a 4" wafer with 100 nm Al (crucible source) | ||
* | *Approx. 8-13 % variation on a 6" wafer with 100 nm Al (crucible source) | ||
* | *Approx. 23 % variation on a 4" wafer with 100 nm Ag (boat source) - expect better result with rotation | ||
*Approx. 10 % variation on a 6" wafer with 100 nm Cr (rod source) | |||
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|style="background:LightGrey; color:black"|Thickness uniformity (with rotation) | |||
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*Approx. 6-9 % Wafer-in-Wafer variation on 4" wafers with Al (crucible source) using 3-wafer holder (4 % variation wafer-to-wafer) | |||
*Approx. 6 % variation for 6" wafers with Al (crucible source) with wafer off-center on holder | |||
*Approx. 7 % variation for 6" wafers with Al (crucible source) with wafer centered on holder. | |||
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|style="background:LightGrey; color:black"|Pumpdown time | |style="background:LightGrey; color:black"|Pumpdown time | ||
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''*'' ''The variation is defined as (Max-Min)/Average for the various points measured on the wafer. The max. point was around the center and the min. somewhere along the edge. The exact location of the maximum thickness depends how the sample is placed relative to the point of maximum material flux. | ''*'' ''The variation is defined as (Max-Min)/Average for the various points measured on the wafer. The max. point was around the center and the min. somewhere along the edge. The exact location of the maximum thickness depends how the sample is placed relative to the point of maximum material flux. Number for Al based on QC measurements 2018-2023.'' | ||