Specific Process Knowledge/Etch/DRIE-Pegasus: Difference between revisions
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*a higher pressure during the etch increases the density of reactive species and hence the etch rate. Since a high platen power is no longer necessary to drive the ion bombardement, lowering it will reduce the impact on the masking material thus improving the selectivity. | *a higher pressure during the etch increases the density of reactive species and hence the etch rate. Since a high platen power is no longer necessary to drive the ion bombardement, lowering it will reduce the impact on the masking material thus improving the selectivity. | ||
The hardware improvements on the DRIE-Pegasus include | |||
*Fast response MFC's mounted on top of the process chamber itself to shorten the gas line | |||
*Fast APC valve | |||
* | |||
===[[Advanced_Silicon_Etcher_-_Pegasus|Details on DRIE-Pegasus]]=== | ===[[Advanced_Silicon_Etcher_-_Pegasus|Details on DRIE-Pegasus]]=== | ||