Specific Process Knowledge/Characterization: Difference between revisions
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<sup>{{fn|1}}</sup> Using the cross section method<br> | <sup>{{fn|1}}</sup> Using the cross section method<br> | ||
<sup>{{fn|2}}</sup> Using the create step method<br> | <sup>{{fn|2}}</sup> Using the create step method<br> | ||
Revision as of 12:05, 28 May 2025
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Overview of characteristics and where to measure it
| Optical Microscopes | SEM (incl. EDX) | AFM | Stylus profilers | Optical profilers | Filmtek (reflectometer) | Ellipsometer | Thickness stylus | XPS | PL mapper | 4-point probe | Probe station | XRD | Life time scanner | Drop shape analyser | Hardness tester | Particle scanner | IR-camera | III-V ECV-profiler | Microspectrophotometer (Craic 20/30 PV) | |
| Breakdown voltage | ||||||||||||||||||||
| Carrier density/doping profile | x | |||||||||||||||||||
| Charge carrier life time | x | |||||||||||||||||||
| Contact angle hydrophobic/hydrophillic | x | |||||||||||||||||||
| Crystallinity | x | |||||||||||||||||||
| Deposition uniformity | x | x | x | |||||||||||||||||
| Dimensions(in plane) | x | x | (x) | (x) | x | x | ||||||||||||||
| Dimensions(height)/Topography | (x) | (x) | x | x | x | |||||||||||||||
| Electrical conductivity | x | |||||||||||||||||||
| Element analysis | x | x | x 4 | x 4 | ||||||||||||||||
| Film stress | x | x 7 | ||||||||||||||||||
| Imaging | x | x | x | x | x | |||||||||||||||
| Material Hardness | x | |||||||||||||||||||
| Band gap | x | x | x | |||||||||||||||||
| Particles | x | x | x | x | x | |||||||||||||||
| Phase changes | ||||||||||||||||||||
| Reflectivity | x | x | x 6 | x | ||||||||||||||||
| Refractive index | x | x | ||||||||||||||||||
| Resistivity | x | |||||||||||||||||||
| Step coverage | x 1 | x 1 | ||||||||||||||||||
| Surface roughness | x | x | x | x | ||||||||||||||||
| Thermal conductivity | ||||||||||||||||||||
| Thin film thickness | x 1 | x 1 | x 2 | x 2 | x | x | x | x 5 | x 3 | x | ||||||||||
| Voids in wafer bonding | x | x | x | |||||||||||||||||
| Wafer thickness | x 1 | x 1 | x | |||||||||||||||||
| Work function | x |
1 Using the cross section method
2 Using the create step method
3 With known resistivity
4 Composition information for crystalline materials
5 Only single layer
6 Good for characterization of VCSEL structures and DBR mirrors
7 Only for crystalline films
Choose characterization topic
- Carrier density (doping) profiler
- Contact angle measurement
- Element analysis
- Film thickness and optical constants
- Hardness measurement
- Photoluminescence mapping
- Four-Point Probe (Resistivity measurement)
- Sample imaging
- Sample preparation for inspection
- Scanning Electron Microscopy
- Stress measurement
- Wafer thickness measurement
- Topographic measurement
- X-ray diffraction
Choose equipment
AFM
Electrical measurements
- 4-Point Probe
- Probe station
- III-V ECV-profiler (Electrochemical Capacitance-Voltage carrier density profiler)
Element analysis
Optical and stylus profilers
- Sensofar S Neox (Optical Profiler)
- Dektak XTA (Stylus Profiler)
- Tencor P17 (Stylus Profiler)
- Dektak 3ST (Stylus profiler)
- Dektak 150 (Stylus Profiler)
Optical microscopes
Optical characterization
SEMs at DTU Nanolab - building 307/314
SEM's in building 346
TEMs at DTU Nanolab - building 307/314
XRD
- General page on XRD, page describing general info relevant to both our XRD's
- XRD Powder, tabletop XRD for Bregg-Brentano measurements of powders
- XRD SmartLab, advanced multipurpose instrument in the cleanroom
- XRD SmartLab 9kW Rotating Anode multipurpose system outside the cleanroom