Specific Process Knowledge/Etch/ICP Metal Etcher: Difference between revisions
| Line 12: | Line 12: | ||
; Breakthrough | ; Breakthrough | ||
: The breakthrough is designed to break through the native aluminium oxide layer that is present on all aluminium surfaces. | : The breakthrough step is designed to break through the native aluminium oxide layer that is present on all aluminium surfaces. The duration of this step should remain fixed. | ||
; Main | |||
: The main step etches bulk aluminium. | |||
{| border="2" cellpadding="2" cellspacing="1" | |||
|+ '''Al etch''' | |||
|- | |||
! rowspan="2" align="center"| Parameter | |||
| colspan="2" align="center"| Process step | |||
|- | |||
| Breakthrough | |||
| Main | |||
|- | |||
| Time (secs) | |||
| 20 | |||
| 40 (variable) | |||
|- | |||
| HBr (sccm) | |||
| - | |||
| 15 | |||
|- | |||
| Cl<sub>2</sub> (sccm) | |||
| 20 | |||
| 25 | |||
|- | |||
| Pressure (mTorr) | |||
| 4, Strike 3 secs @ 15 mTorr??? | |||
| 1 | |||
|- | |||
| Coil power (W) | |||
| 600 | |||
| 500 | |||
|- | |||
| Platen power (W) | |||
| 125 | |||
| 100 | |||
|- | |||
| Temperature (<sup>o</sup>C) | |||
| 20 | |||
| 20 | |||
|- | |||
| Spacers (mm) | |||
| 30 | |||
| 30 | |||
|- | |||
|} | |||
==Etching of nanostructures in silicon using the ICP Metal Etcher or DRIE Pegasus== | ==Etching of nanostructures in silicon using the ICP Metal Etcher or DRIE Pegasus== | ||