Specific Process Knowledge/Pattern Design/Mask Specifications: Difference between revisions
| Line 28: | Line 28: | ||
: Chromium down | : Chromium down | ||
GDS-file: GLO006_v7.gds | GDS-file: GLO006_v7.gds<br> | ||
Top cell: wafer | Top cell: wafer | ||
Layer (GDS number): 01 | Layer (GDS number): 01 <br> | ||
Mask Type: Digitised data= Dark, right reading | Mask Type: Digitised data= Dark, right reading<br> | ||
Text(max 30 characters): init-2019-Nitride-etch | Text(max 30 characters): init-2019-Nitride-etch | ||
Layer (GDS number): 02 | Layer (GDS number): 02<br> | ||
Mask Type: Digitised data= Clear, Wrong reading | Mask Type: Digitised data= Clear, Wrong reading<br> | ||
Text(max 30 characters): init-2019-KOH-backside | Text(max 30 characters): init-2019-KOH-backside | ||
Revision as of 17:29, 27 May 2025
Mask Specifications
Below you can find two examples on how to write the specification for 5" and 7" masks.
5" masks
All Layers:
- 5" chromium mask
- fracture limits ((-50000, -50000),(50000, 50000))
- Dark periphery
- Chromium down
GDS-file: GLO006_v7.gds
Top cell: wafer
Layer (GDS number): 01
Mask Type: Digitised data= Dark, right reading
Text(max 30 characters): init-2019-Nitride-etch
Layer (GDS number): 02
Mask Type: Digitised data= Clear, Wrong reading
Text(max 30 characters): init-2019-KOH-backside
For 7" masks
All Layers:
- 7" chromium mask
- fracture limits ((-70000, -70000),(70000, 70000))
- Dark periphery
- Chromium down
GDS-file: GLO006_v7.gds
Top cell: wafer
Layer (GDS number): 01
Mask Type: Digitised data= Dark, right reading
Text(max 30 characters): init-2019-Nitride-etch
Layer (GDS number): 02
Mask Type: Digitised data= Clear, Wrong reading
Text(max 30 characters): init-2019-KOH-backside