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Specific Process Knowledge/Thermal Process/C2 Furnace III-V oxidation: Difference between revisions

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'''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=88  III-V Oxidation furnace (C2)]'''
'''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=88  III-V Oxidation furnace (C2)]'''


==Process knowledge==
==Overview of the performance of the General Purpose Annealing furnace and some process related parameters==
*[[Specific_Process_Knowledge/Thermal_Process/Oxidation/Oxidation_on_III-V_oxidation_furnace_(C2)|Standard wet oxidation recipe on the III-V oxidation furnace]]
 
==Overview of the performance of the III-V oxidation furnace and some process related parameters==




Revision as of 12:33, 27 May 2025

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The furnace is being tested.

General Purpose Annealing furnace (C2)

The General Purpose Annealing furnace (C2) is a Tempress horizontal furnace located in the furnace C stack.

The C2 furnace has from September 2024 become a general purpose annealing furnace. It means that it can be used for annealing of different samples and different materials, such as silicon substrates with metal layers.

A permission from the Thin Film group is required, before samples are annealed in the furnace.

An annealing temperature of maximum 600 C is allowed in the furnace, with a ramp rate of up to 10°C/min. The standby temperature is set to 250°C.

Annealings can be performed in a nitrogen atmosphere, with nitrogen flow rates adjustable up to 10 SLM.

A permission from the Thin Film group is required, before samples are annealed in the furnace.

Please also check the cross contamination information in LabManager before you use the furnace.

The furnace is a Tempress horizontal furnace. A Sample is placed on the carrier quartz plate, which always be kept inside the furnace tube, and loaded to the hot furnace that filling with water vapour. The sample get oxidized at the desired time and then the furnace door will automatically open so that the oxidation stops and the sample is ready to be unloaded.


The user manual and contact information can be found in LabManager:

III-V Oxidation furnace (C2)

Overview of the performance of the General Purpose Annealing furnace and some process related parameters

Purpose
  • Annealing of different samples and sample materials
Process parameter range Annnealing temperature
  • Up to 600 oC, temperature ramp rate up to 10 oC/s
Standby temperature
  • 250 oC/s
Process pressure
  • 1 atm
Gases on the system
  • N2, max flow 10 SLM
Substrates Batch size
  • Up to 30 4" wafers
  • 1 6" wafers (placed horizontally on the boat)
  • Several smaller samples (placed horizontally on a 6" carrier wafer placed on the boat)
Substrate materials allowed
  • Most materials, but samples must be able to tolerate the annealing temperature, and a permission from the Thin Film group is required


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