Specific Process Knowledge/Thermal Process/C2 Furnace III-V oxidation: Difference between revisions
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*Annealing of different samples and sample materials | *Annealing of different samples and sample materials | ||
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!style="background:silver; color:black" align="center"| | !style="background:silver; color:black" align="center" valign="center" rowspan="4"|Process parameter range | ||
|style="background:LightGrey; color:black"| | |style="background:LightGrey; color:black"|Annnealing temperature | ||
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* | *Up to 600 <sup>o</sup>C, temperature ramp rate up to 10 <sup>o</sup>C/s | ||
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|style="background:LightGrey; color:black"|Standby temperature | |||
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* | *250 <sup>o</sup>C/s | ||
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|style="background:LightGrey; color:black"|Process pressure | |style="background:LightGrey; color:black"|Process pressure | ||
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*1 atm | *1 atm | ||
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|style="background:LightGrey; color:black"| | |style="background:LightGrey; color:black"|Gases on the system | ||
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*N<sub>2</sub> | *N<sub>2</sub>, max flow 10 SLM | ||
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!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates | !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates | ||
|style="background:LightGrey; color:black"|Batch size | |style="background:LightGrey; color:black"|Batch size | ||
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*Several smaller samples (placed | *Up to 30 4" wafers | ||
*1 6" wafers (placed horizontally on the boat) | |||
*Several smaller samples (placed horizontally on a 6" carrier wafer placed on the boat) | |||
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| style="background:LightGrey; color:black"|Substrate materials allowed | | style="background:LightGrey; color:black"|Substrate materials allowed | ||
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* | *Most materials, but samples must be able to tolerate the annealing temperature, and a permission from the Thin Film group is required | ||
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