Specific Process Knowledge/Thermal Process: Difference between revisions
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'''A stack furnaces:''' | '''A stack furnaces:''' | ||
*[[/A1 Bor Drive-in furnace|Boron Drive-in + Predep furnace (A1)]] - ''For oxidation and annealing of Si wafers, and for boron pre-deposition (doping) and for drive-in afterwards'' | *[[/A1 Bor Drive-in furnace|Boron Drive-in + Predep furnace (A1)]] - ''For oxidation and annealing of Si wafers, and for boron pre-deposition (doping) and for drive-in afterwards'' | ||
*[[/A2 Gate Oxide furnace|Gate Oxide furnace (A2)]] - | *[[/A2 Gate Oxide furnace|Gate Oxide furnace (A2)]] - For dry oxidation of Si wafer | ||
*[[/A3 Phosphor Drive-in furnace|Phosphorus Drive-in furnace (A3)]] - ''For oxidation and annealing of Si wafers and for drive-in after phosphorus pre-dep'' | *[[/A3 Phosphor Drive-in furnace|Phosphorus Drive-in furnace (A3)]] - ''For oxidation and annealing of Si wafers and for drive-in after phosphorus pre-dep'' | ||
*[[/A4 Phosphor Pre-dep furnace|Phosphorus Predep furnace (A4)]] - ''For pre-deposition (doping) of phosphorus on Si wafers'' | *[[/A4 Phosphor Pre-dep furnace|Phosphorus Predep furnace (A4)]] - ''For pre-deposition (doping) of phosphorus on Si wafers'' | ||