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| |-style="background:WhiteSmoke; color:black" | | |-style="background:WhiteSmoke; color:black" |
| !'''Allowed materials''' | | !'''Allowed materials''' |
| |In 'Aluminium Etch' bath: | | |In beaker: |
| *See Cross Contamination Sheet for [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=381 Aluminium Etch] bath (require login)
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| In beaker: | |
| *Any material | | *Any material |
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Revision as of 08:30, 27 May 2025
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Etch of Titanium oxide has been test in the ICP metal etcher.
Comparison of Titanium Oxide (ALD) etch Methods 
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BHF
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ICP Metal Etcher
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| Generel description
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Wet etch of TiO2 (ALD)
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Dry plasma etch of Al
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Sputtering of Al - pure physical etch.
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| Etch rate range
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2,5 nm/min
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- ~350 nm/min (depending on features size and etch load)
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- ~30nm/min (not tested yet)
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| Etch profile
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- Anisotropic (vertical sidewalls)
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- Anisotropic (angles sidewalls, typical around 70 dg)
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| Substrate size
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- Chips (6-60 mm)
- 100 mm wafers
- 150 mm wafers
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- smaller pieces on a carrier wafer
- #1 100mm wafers (when set up to 100mm wafers)
- #1 150mm wafers (when set up to 150mm wafers)
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Smaller pieces glued to carrier wafer
- #1 50mm wafer
- #1 100mm wafer
- #1 150mm wafer
- #1 200mm wafer
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| Allowed materials
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In beaker:
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- Every thing that is allowed in the Developer: TMAH Manual
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- Silicon
- Quartz/fused silica
- Photoresist/e-beam resist
- PolySilicon,
- Silicon oxide
- Silicon (oxy)nitride
- Aluminium
- Titanium
- Chromium
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- Silicon
- Silicon oxides
- Silicon nitrides
- Metals from the +list
- Metals from the -list
- Alloys from the above list
- Stainless steel
- Glass
- III-V materials
- Resists
- Polymers
- Capton tape
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