Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano142-pxnano2: Difference between revisions

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{| border="2" cellpadding="2" cellspacing="1"  
{| border="2" cellpadding="2" cellspacing="1"  
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! colspan="2" |  
! colspan="2" | Recipe
! nano1.42
! nano1.42
! pxnano2
! pxnano2
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| ASE
| ASE
|-
|-
! rowspan="6" align="center"| Recipe
! rowspan="6" align="center"| Parameters
| Gas
| Gas
| C<sub>4</sub>F<sub>8</sub> 75 sccm, SF<sub>6</sub> 38 sccm
| C<sub>4</sub>F<sub>8</sub> 75 sccm, SF<sub>6</sub> 38 sccm

Revision as of 10:32, 23 May 2011

nano1.42 versus pxnano2

Recipe nano1.42 pxnano2
Tool Pegasus ASE
Parameters Gas C4F8 75 sccm, SF6 38 sccm
Pressure 4 mTorr, Strike 3 secs @ 15 mTorr
Power 800 W CP, 40 W PP
Temperature -20 degs
Hardware 100 mm Spacers
Time 120 secs
Conditions Run ID 2017
Conditioning Sequence: Oxygen clean, MU tests, processes, no oxygen between runs
Mask 211 nm zep etched down to 82 nm