Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano142-pxnano2: Difference between revisions
No edit summary |
|||
| Line 37: | Line 37: | ||
<gallery caption="The results" widths=" | <gallery caption="The results" widths="500" heights="350" perrow="2"> | ||
image:WF_2E09a_mar23_2011-030.jpg|The 30 nm trenches etched 120 seconds nano1.42 | image:WF_2E09a_mar23_2011-030.jpg|The 30 nm trenches etched 120 seconds nano1.42 | ||
Revision as of 10:23, 23 May 2011
nano1.42 versus pxnano2
| Recipe | Gas | C4F8 75 sccm, SF6 38 sccm |
|---|---|---|
| Pressure | 4 mTorr, Strike 3 secs @ 15 mTorr | |
| Power | 800 W CP, 40 W PP | |
| Temperature | -20 degs | |
| Hardware | 100 mm Spacers | |
| Time | 120 secs | |
| Conditions | Run ID | 2017 |
| Conditioning | Sequence: Oxygen clean, MU tests, processes, no oxygen between runs | |
| Mask | 211 nm zep etched down to 82 nm |
- The results
-
The 30 nm trenches etched 120 seconds nano1.42 -
The 30 nm trenches etched 96 seconds pxnano2 -
The 60 nm trenches etched 120 seconds -
The 60 nm trenches etched 96 seconds -
The 90 nm trenches etched 120 seconds -
The 90 nm trenches etched 96 seconds -
The 120 nm trenches etched 120 seconds -
The 120 nm trenches etched 96 seconds -
The 150 nm trenches etched 120 seconds -
The 150 nm trenches etched 96 seconds
