Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano142-pxnano2: Difference between revisions

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image:WF_2E09b_mar23_2011-060.jpg|The 60 nm trenches etched 96 seconds
image:WF_2E09b_mar23_2011-060.jpg|The 60 nm trenches etched 96 seconds


image:WF_2E09a_mar23_2011-060.jpg|The 90 nm trenches etched 120 seconds
image:WF_2E09a_mar23_2011-090.jpg|The 90 nm trenches etched 120 seconds
image:WF_2E09b_mar23_2011-090.jpg|The 90 nm trenches etched 96 seconds
image:WF_2E09b_mar23_2011-090.jpg|The 90 nm trenches etched 96 seconds


image:WF_2E09a_mar23_2011-060.jpg|The 120 nm trenches etched 120 seconds
image:WF_2E09a_mar23_2011-120.jpg|The 120 nm trenches etched 120 seconds
image:WF_2E09b_mar23_2011-120.jpg|The 120 nm trenches etched 96 seconds
image:WF_2E09b_mar23_2011-120.jpg|The 120 nm trenches etched 96 seconds


image:WF_2E09a_mar23_2011-060.jpg|The 150 nm trenches etched 120 seconds
image:WF_2E09a_mar23_2011-150.jpg|The 150 nm trenches etched 120 seconds
image:WF_2E09b_mar23_2011-150.jpg|The 150 nm trenches etched 96 seconds
image:WF_2E09b_mar23_2011-150.jpg|The 150 nm trenches etched 96 seconds


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Revision as of 14:32, 19 May 2011

nano1.42 versus pxnano2

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Recipe Gas BCl3 5 sccm, HBR 15 sccm
Pressure 2 mTorr, Strike 3 secs @ 5 mTorr
Power 900 W CP, 75 W PP
Temperature 50 degs
Hardware 100 mm Spacers
Time 60, 120 and 180 secs
Conditions Run ID 452, 453 and 454
Conditioning Sequence: Oxygen clean, MU tests, processes, no oxygen between runs
Mask 190 nm zep