Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano142-pxnano2: Difference between revisions

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New page: == nano1.42 versus pxnano2 == {| border="2" cellpadding="2" cellspacing="1" |+ '''Recipe Sinano3.31''' |- ! rowspan="6" align="center"| Recipe | Gas | BCl<sub>3</sub> 5 sccm, HBR 15 sccm...
 
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{| border="2" cellpadding="2" cellspacing="1"  
{| border="2" cellpadding="2" cellspacing="1"  
|+ '''Recipe Sinano3.31'''
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! rowspan="6" align="center"| Recipe
! rowspan="6" align="center"| Recipe

Revision as of 11:33, 19 May 2011

nano1.42 versus pxnano2

h
Recipe Gas BCl3 5 sccm, HBR 15 sccm
Pressure 2 mTorr, Strike 3 secs @ 5 mTorr
Power 900 W CP, 75 W PP
Temperature 50 degs
Hardware 100 mm Spacers
Time 60, 120 and 180 secs
Conditions Run ID 452, 453 and 454
Conditioning Sequence: Oxygen clean, MU tests, processes, no oxygen between runs
Mask 190 nm zep
  • The results
  • The 30 nm trenches etched 120 seconds
    The 30 nm trenches etched 120 seconds
  • The 60 nm trenches etched 120 seconds
    The 60 nm trenches etched 120 seconds
  • The 90 nm trenches etched 120 seconds
    The 90 nm trenches etched 120 seconds
  • The 120 nm trenches etched 120 seconds
    The 120 nm trenches etched 120 seconds
  • The 150 nm trenches etched 120 seconds
    The 150 nm trenches etched 120 seconds
  • The 30 nm trenches etched 96 seconds
    The 30 nm trenches etched 96 seconds
  • The 60 nm trenches etched 96 seconds
    The 60 nm trenches etched 96 seconds
  • The 90 nm trenches etched 96 seconds
    The 90 nm trenches etched 96 seconds
  • The 120 nm trenches etched 96 seconds
    The 120 nm trenches etched 96 seconds
  • The 150 nm trenches etched 96 seconds
    The 150 nm trenches etched 96 seconds
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