Specific Process Knowledge/Cross Contamination: Difference between revisions
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As explained for [[Specific Process Knowledge/Preparation|'''The Process Flow''']], there are a large variety of cleanroom fabrication and characterization methods that can be combined to create new materials or structures. Some processes are very sensitive to contaminations and equipment cannot always be cleaned easily running a pre-process cleaning step. | As explained for [[Specific Process Knowledge/Preparation|'''The Process Flow''']], there are a large variety of cleanroom fabrication and characterization methods that can be combined to create new materials or structures. Some processes are very sensitive to contaminations and equipment cannot always be cleaned easily running a pre-process cleaning step. | ||
For example, contaminations during a thermal oxidation process to grow silicon dioxide (SiO₂) layers on silicon wafers can significantly degrade the quality and functionality of the resulting oxide layer. Especially metal ions pose a serious issue as they increase leakage currents, reduced the breakdown voltage, reduce the dielectric strength, and cause threshold voltage shifts in MOS devices. But contaminants can also alter the stoichiometry or uniformity of the oxide layer due to non-uniform growth rates and the formation of defective or porous oxides. Therefore, thermal oxidation furnaces have to be maintained extremely clean and the cannot be cleaned easily. < | For example, contaminations during a thermal oxidation process to grow silicon dioxide (SiO₂) layers on silicon wafers can significantly degrade the quality and functionality of the resulting oxide layer. Especially metal ions pose a serious issue as they increase leakage currents, reduced the breakdown voltage, reduce the dielectric strength, and cause threshold voltage shifts in MOS devices. But contaminants can also alter the stoichiometry or uniformity of the oxide layer due to non-uniform growth rates and the formation of defective or porous oxides. Therefore, thermal oxidation furnaces have to be maintained extremely clean and the cannot be cleaned easily. | ||
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|Please note, as a multiuser facility we need to establish working procedures to provide the best possible working environment for our users, not only in terms of safety, but also regarding reliability of equipment and prcoess run on tose. We expect all users to adhere strictly to the guidelines and equipment usage rules, with particular attention to preventing cross-contamination between tools. We are happy to assist you in reviewing and refining your process flow to help streamline your work and ensure compatibility with our facility standards. You can find more information on how to create a process flow [[LabAdviser/Process flow approval|here.]] | |||
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# Compliance with Cleanroom Standards | # Compliance with Cleanroom Standards | ||
#* Semiconductor fabs operate under strict cleanroom classifications (e.g., ISO 5 or better). | #* Semiconductor fabs operate under strict cleanroom classifications (e.g., ISO 5 or better). | ||